n-channel power trench mosfet.
General Description
* Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A
* Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A
* Low Profile - 1mm max in Power 33
* RoHS .
Application
* DC - DC Conversion
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* Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A
* Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A
* Low Profile - 1mm max in Power 33
* RoHS Compliant
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This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced .
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